NPN Bipolar Junction Transistor (BJT) for power applications, featuring a 150V collector-emitter breakdown voltage and a 7A continuous collector current rating. This through-hole component offers a maximum power dissipation of 60W and a transition frequency of 10MHz. It operates within a temperature range of -65°C to 150°C and is housed in a TO-220-3 package. The device is lead-free and RoHS compliant.
Frequency10MHz
PackageTO-220-3
Current Rating7A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BU407 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 330V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 7A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 16MHz |
| hFE Min | 12 |
| Lead Free | Lead Free |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 60W |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 150V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BU407 Datasheet
Download the complete datasheet for Onsemi BU407 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
