NPN Bipolar Junction Transistor (BJT) in a TO-220 package, designed for through-hole mounting. Features a maximum collector current of 7A and a collector-emitter breakdown voltage of 150V. Offers a collector-emitter saturation voltage of 1V and a transition frequency of 10MHz. This component supports a maximum power dissipation of 60W and operates within a temperature range of -65°C to 150°C. It is RoHS compliant and lead-free.
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Onsemi BU407TU technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 330V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 7A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Lead Free | Lead Free |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | BU407 |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 150V |
| RoHS | Compliant |
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