NPN bipolar junction transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a 200V collector-emitter breakdown voltage (VCEO) and a 400V collector-base voltage (VCBO). Offers a continuous collector current rating of 7A, with a maximum power dissipation of 60W. Operates across a wide temperature range from -55°C to 150°C, with a transition frequency of 10MHz. This component is lead-free and RoHS compliant.
Frequency10MHz
PackageTO-220-3
Current Rating7A
MountingThrough Hole
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Technical Specifications
Onsemi BU408 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 7A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Lead Free | Lead Free |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 150V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BU408 Datasheet
Download the complete datasheet for Onsemi BU408 to view detailed technical specifications.
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