NPN bipolar junction transistor (BJT) for switching applications, featuring a 400V collector-emitter breakdown voltage and a 5A maximum collector current. This through-hole component offers a 700V collector-base voltage and a 12MHz transition frequency. With a maximum power dissipation of 75W and a TO-220-3 package, it operates within a temperature range of -65°C to 150°C.
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Onsemi BUL45 technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 890mV |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 9V |
| Gain Bandwidth Product | 12MHz |
| Height | 9.28mm |
| hFE Min | 14 |
| Lead Free | Contains Lead |
| Length | 10.28mm |
| Max Collector Current | 5A |
| Max Frequency | 12MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| RoHS Compliant | No |
| Series | SWITCHMODE™ |
| Transition Frequency | 12MHz |
| DC Rated Voltage | 400V |
| Width | 4.82mm |
| RoHS | Not Compliant |
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