CPH3205-TL-E

NPN BJT Transistor, 50V, 3A, 380MHz, Low VCE(sat), SC pkg

NPN Bipolar Junction Transistor (BJT) in SC package, featuring a maximum collector current of 3A and a collector-emitter breakdown voltage of 50V. This device offers a low collector-emitter saturation voltage of 140mV, a minimum DC current gain (hFE) of 200, and a transition frequency of 380MHz. Operating across a temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 900mW. The component is RoHS compliant and lead-free, supplied in a 3000-piece tape and reel.

Frequency380MHz

PackageSC

PolarityNPN

Quick Jump:

Technical Specifications

Onsemi CPH3205-TL-E technical specifications.

General

Package/Case	SC
Collector Base Voltage (VCBO)	100V
Collector Emitter Breakdown Voltage	50V
Collector Emitter Saturation Voltage	140mV
Collector-emitter Voltage-Max	210mV
Contact Plating	Tin, Matte
Emitter Base Voltage (VEBO)	6V
Gain Bandwidth Product	380MHz
Height	0.9mm
hFE Min	200
Lead Free	Lead Free
Length	2.9mm
Max Breakdown Voltage	50V
Max Collector Current	3A
Max Frequency	380MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	900mW
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
RoHS Compliant	Yes
Transition Frequency	380MHz
Width	1.6mm