NPN Bipolar Junction Transistor (BJT) in SC package, featuring a maximum collector current of 3A and a collector-emitter breakdown voltage of 50V. This device offers a low collector-emitter saturation voltage of 140mV, a minimum DC current gain (hFE) of 200, and a transition frequency of 380MHz. Operating across a temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 900mW. The component is RoHS compliant and lead-free, supplied in a 3000-piece tape and reel.
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Onsemi CPH3205-TL-E technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 140mV |
| Collector-emitter Voltage-Max | 210mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 380MHz |
| Height | 0.9mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Frequency | 380MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 380MHz |
| Width | 1.6mm |
| RoHS | Compliant |
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