
P-channel JFET with -20V drain-source breakdown voltage and 3A continuous drain current. Features 83mΩ drain-source resistance at Vgs=10V. Single element configuration in a TO-236-3 package, measuring 2.9mm x 1.6mm x 0.9mm. Operates from -55°C to 150°C with 1W power dissipation. RoHS and Halogen Free compliant, supplied on a 3000-piece tape and reel.
Onsemi CPH3350-TL-H technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 83mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| Input Capacitance | 375pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 83mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 8.1ns |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi CPH3350-TL-H to view detailed technical specifications.
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