P-channel JFET with -20V drain-source breakdown voltage and 3A continuous drain current. Features 83mΩ drain-source resistance at Vgs=10V. Single element configuration in a TO-236-3 package, measuring 2.9mm x 1.6mm x 0.9mm. Operates from -55°C to 150°C with 1W power dissipation. RoHS and Halogen Free compliant, supplied on a 3000-piece tape and reel.
PackageTO-236-3
PolarityP-CHANNEL
Power1W
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Technical Specifications
Onsemi CPH3350-TL-H technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
83mR
Drain to Source Voltage (Vdss)
20V
Element Configuration
Single
Fall Time
37ns
Gate to Source Voltage (Vgs)
10V
Halogen Free
Halogen Free
Height
0.9mm
Input Capacitance
375pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
83mR
RoHS Compliant
Yes
Turn-Off Delay Time
42ns
Turn-On Delay Time
8.1ns
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi CPH3350-TL-H Datasheet
Download the complete datasheet for Onsemi CPH3350-TL-H to view detailed technical specifications.
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