Single P-channel Junction Field-Effect Transistor (JFET) designed for power applications. Features a continuous drain current of 2.5A and a drain-to-source breakdown voltage of -20V. Offers a low on-resistance of 137mΩ at a gate-to-source voltage of 10V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Packaged in a compact TO-236-3 (SOT-23) surface-mount package, supplied on a 3000-piece tape and reel. RoHS and Halogen Free compliant.
PackageTO-236-3
PolarityP-CHANNEL
Power1W
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Technical Specifications
Onsemi CPH3356-TL-H technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 137mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 137mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 5.7ns |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi CPH3356-TL-H Datasheet
Download the complete datasheet for Onsemi CPH3356-TL-H to view detailed technical specifications.
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