Single P-channel Junction Field-Effect Transistor (JFET) designed for power applications. Features a continuous drain current of 2.5A and a drain-to-source breakdown voltage of -20V. Offers a low on-resistance of 137mΩ at a gate-to-source voltage of 10V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Packaged in a compact TO-236-3 (SOT-23) surface-mount package, supplied on a 3000-piece tape and reel. RoHS and Halogen Free compliant.
PackageTO-236-3
PolarityP-CHANNEL
Power1W
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Technical Specifications
Onsemi CPH3356-TL-H technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
137mR
Drain to Source Voltage (Vdss)
20V
Element Configuration
Single
Fall Time
20ns
Gate to Source Voltage (Vgs)
10V
Halogen Free
Halogen Free
Height
0.9mm
Input Capacitance
250pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1W
Rds On Max
137mR
RoHS Compliant
Yes
Turn-Off Delay Time
34ns
Turn-On Delay Time
5.7ns
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi CPH3356-TL-H Datasheet
Download the complete datasheet for Onsemi CPH3356-TL-H to view detailed technical specifications.
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