Dual common emitter NPN/PNP bipolar junction transistor (BJT) in a 5-pin CPH surface mount package. Features a maximum collector-emitter voltage of 30V, maximum DC collector current of 2A, and 1200mW power dissipation. Offers a minimum DC current gain of 200 at 100mA/2V and transition frequencies up to 440MHz. Operating temperature range from -55°C to 150°C.
PackageCPH
MountingSurface Mount
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Technical Specifications
Onsemi CPH5516-TL-E technical specifications.
General
| Package/Case | CPH |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN|PNP |
| Configuration | Dual Common Emitter |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 40@NPN|30@PNPV |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum DC Collector Current | 2A |
| Maximum Power Dissipation | 1200mW |
| Material | Si |
| Minimum DC Current Gain | 200@100mA@2V |
| Maximum Transition Frequency | 400(Typ)@NPN|440(Typ)@PNPMHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi CPH5516-TL-E Datasheet
Download the complete datasheet for Onsemi CPH5516-TL-E to view detailed technical specifications.
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