Dual common emitter NPN/PNP bipolar junction transistor in a 5-pin CPH surface mount package. Features 50V collector-emitter voltage, 1A maximum DC collector current, and 1200mW maximum power dissipation. Offers a minimum DC current gain of 200 at 100mA/2V and a typical transition frequency of 420MHz. Constructed from silicon with gull-wing leads, this compact component measures 2.9mm x 1.6mm x 0.9mm.
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Onsemi CPH5518-TL-E technical specifications.
| Package/Case | CPH |
| Lead Shape | Gull-wing |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN|PNP |
| Configuration | Dual Common Emitter |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 80@NPN|50@PNPV |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 1200mW |
| Material | Si |
| Minimum DC Current Gain | 200@100mA@2V |
| Maximum Transition Frequency | 420(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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