
NPN RF Transistor in SOT-23-6 package, featuring a 12V collector-emitter breakdown voltage and a maximum collector current of 150mA. This component offers a gain of 9dB and a transition frequency (fT) of 7GHz, with a maximum operating frequency of 1GHz. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 800mW. Supplied on a 3000-piece tape and reel, this lead-free and RoHS compliant transistor is designed for RF applications.
Onsemi CPH6003A-TL-E technical specifications.
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 7MHz |
| Gain | 9dB |
| Gain Bandwidth Product | 7GHz |
| Height | 0.9mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 150mA |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 800mW |
| RoHS Compliant | Yes |
| Transition Frequency | 7GHz |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi CPH6003A-TL-E to view detailed technical specifications.
No datasheet is available for this part.