P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 3A continuous drain current. This single-element silicon transistor is housed in a compact 6-pin CPH package (SOT family) with surface-mount capability. Key electrical characteristics include a maximum gate-source voltage of ±20V, a low drain-source on-resistance of 169mΩ at 10V, and a typical gate charge of 3.9nC at 10V. The component offers a maximum power dissipation of 1600mW and operates across a wide temperature range from -55°C to 150°C.
PackageCPH
MountingSurface Mount
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Technical Specifications
Onsemi CPH6355-TL-H technical specifications.
General
Package Family Name
SOT
Package/Case
CPH
Pin Count
6
PCB
6
Package Length (mm)
2.9
Package Width (mm)
1.6
Package Height (mm)
0.9
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
3A
Material
Si
Maximum Drain Source Resistance
169@10VmOhm
Typical Gate Charge @ Vgs
3.9@10VnC
Typical Gate Charge @ 10V
3.9nC
Typical Input Capacitance @ Vds
172@10VpF
Maximum Power Dissipation
1600mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi CPH6355-TL-H Datasheet
Download the complete datasheet for Onsemi CPH6355-TL-H to view detailed technical specifications.
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