P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 3A continuous drain current. This single-element silicon transistor is housed in a compact 6-pin CPH package (SOT family) with surface-mount capability. Key electrical characteristics include a maximum gate-source voltage of ±20V, a low drain-source on-resistance of 169mΩ at 10V, and a typical gate charge of 3.9nC at 10V. The component offers a maximum power dissipation of 1600mW and operates across a wide temperature range from -55°C to 150°C.
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| Package Family Name | SOT |
| Package/Case | CPH |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3A |
| Material | Si |
| Maximum Drain Source Resistance | 169@10VmOhm |
| Typical Gate Charge @ Vgs | 3.9@10VnC |
| Typical Gate Charge @ 10V | 3.9nC |
| Typical Input Capacitance @ Vds | 172@10VpF |
| Maximum Power Dissipation | 1600mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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