NPN bipolar junction transistor (BJT) with a maximum collector current of 10A and a collector-emitter voltage of 80V. Features a 50MHz transition frequency and a minimum DC current gain (hFE) of 60. Packaged in a TO-220-3 standard configuration, this component offers a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C. RoHS compliant with tin, matte contact plating.
Frequency50MHz
PackageTO-220-3
Current Rating10A
PolarityNPN
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Technical Specifications
Onsemi D44H11G technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
1V
Contact Plating
Tin, Matte
Current Rating
10A
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
9.28mm
hFE Min
60
Lead Free
Lead Free
Length
10.28mm
Max Collector Current
10A
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
80V
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi D44H11G Datasheet
Download the complete datasheet for Onsemi D44H11G to view detailed technical specifications.
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