NPN bipolar junction transistor (BJT) designed for power applications. Features a maximum collector current of 15A and a collector-emitter voltage (VCEO) of 80V. Offers a minimum DC current gain (hFE) of 35 and a transition frequency of 50MHz. Packaged in a TO-220-3 configuration, this component supports a maximum power dissipation of 83W and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
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Onsemi D44VH10G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 0.62inch |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 15A |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 80V |
| Width | 4.82mm |
| RoHS | Compliant |
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