PNP Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a maximum collector current of 10A and a collector-emitter voltage (VCEO) of 80V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 40MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 2W. Packaged in a tube of 50 units.
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Onsemi D45H11G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Matte |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| Height | 9.28mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 10A |
| Max Frequency | 40MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -80V |
| Width | 4.82mm |
| RoHS | Compliant |
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