PNP Bipolar Junction Transistor (BJT) in a TO-220-3 package, designed for power amplification. Features a maximum collector current of 8A and a collector-emitter voltage (VCEO) of 30V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 25MHz. This lead-free, RoHS-compliant component has a maximum power dissipation of 60W and operates within a temperature range of -55°C to 150°C.
Frequency25MHz
PackageTO-220-3
Current Rating-8A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi D45H2A technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Matte |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 25MHz |
| Gain Bandwidth Product | 25MHz |
| Height | 9.2mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Collector Current | 8A |
| Max Frequency | 25MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 60W |
| RoHS Compliant | Yes |
| Series | D45H2A |
| Transition Frequency | 25MHz |
| DC Rated Voltage | -30V |
| Weight | 1.8g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi D45H2A Datasheet
Download the complete datasheet for Onsemi D45H2A to view detailed technical specifications.
No datasheet is available for this part.
Product Images
