PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-220AB package. Features a maximum collector current of 10A and a collector-emitter voltage (VCEO) of 60V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 40MHz. Maximum power dissipation is 60W, with an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Frequency40MHz
PackageTO-220AB
Current Rating8A
MountingThrough Hole
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Technical Specifications
Onsemi D45H8 technical specifications.
General
| Package/Case | TO-220AB |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 10A |
| Max Frequency | 40MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -60V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi D45H8 Datasheet
Download the complete datasheet for Onsemi D45H8 to view detailed technical specifications.
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