PNP Bipolar Junction Transistor (BJT) with a 10A continuous collector current and 60V collector-emitter voltage. Features a maximum power dissipation of 2W and a transition frequency of 40MHz. Packaged in a TO-220-3 configuration, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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Onsemi D45H8G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| Height | 9.28mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 10A |
| Max Frequency | 40MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -60V |
| Width | 4.82mm |
| RoHS | Compliant |
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