PNP Digital Bipolar Junction Transistor featuring a 50V Collector-Emitter Breakdown Voltage and a 100mA Continuous Collector Current. This component offers a maximum power dissipation of 200mW and a low Collector-Emitter Saturation Voltage of 250mV. Designed for surface mounting, it is packaged in a 3-pin SOT-416 (SC) case, with dimensions of 1.65mm length, 0.9mm width, and 0.9mm height. The transistor operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSC
Current Rating70mA
PolarityPNP
Power200mW
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Technical Specifications
Onsemi DTA114EET1G technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 70mA |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Length | 1.65mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 50V |
| Output Voltage | 300mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Width | 0.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi DTA114EET1G Datasheet
Download the complete datasheet for Onsemi DTA114EET1G to view detailed technical specifications.
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