The DTA114EM3T5G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. It is packaged in a SOT-723-3 package and has a maximum power dissipation of 260mW. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant.
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| Package/Case | SOT-723-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 0.55mm |
| hFE Min | 35 |
| Length | 1.25mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 260mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 260mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Width | 0.85mm |
| RoHS | Compliant |
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