
The DTA123JM3T5G is a PNP transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 260mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a SOT-723-3 case and is lead-free and halogen-free. It is RoHS compliant and available in quantities of 8000 per reel.
Onsemi DTA123JM3T5G technical specifications.
| Package/Case | SOT-723-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Halogen Free | Halogen Free |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 260mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 260mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi DTA123JM3T5G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.