PNP Digital BJT transistor featuring a 50V collector-emitter breakdown voltage and 100mA continuous collector current. This component offers a low 250mV collector-emitter saturation voltage and a maximum power dissipation of 200mW. Encased in a 3-pin SOT-416 package, it operates within a temperature range of -55°C to 150°C and is RoHS and Halogen Free compliant. Packaging is provided on a tape and reel.
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| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 1.65mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Width | 0.9mm |
| RoHS | Compliant |
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These are design resources that include the Onsemi DTA143ZET1G
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
