PNP Digital BJT transistor featuring a 50V collector-emitter breakdown voltage and 100mA continuous collector current. This component offers a low collector-emitter saturation voltage of 250mV and a minimum hFE of 80. Designed for surface mounting, it is housed in a 3-pin SOT-416 package with dimensions of 1.65mm length, 0.9mm width, and 0.8mm height. Operating across a temperature range of -55°C to 150°C, it boasts 200mW power dissipation and is RoHS compliant and halogen-free.
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| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 1.65mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Width | 0.9mm |
| RoHS | Compliant |
These are design resources that include the Onsemi DTA144EET1G
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
