NPN digital bipolar transistor in SOT-416 package, featuring a 50V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a maximum power dissipation of 200mW and a low collector-emitter saturation voltage of 250mV. Operates across a temperature range of -55°C to 150°C, with a minimum hFE of 35. This RoHS and Halogen Free component is supplied on tape and reel.
PackageSOT-416
Current Rating70mA
PolarityNPN
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Technical Specifications
Onsemi DTC114EET1G technical specifications.
General
Package/Case
SOT-416
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
70mA
Halogen Free
Halogen Free
Height
0.75mm
hFE Min
35
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
100mA
Max Power Dissipation
200mW
Operating Supply Voltage
50V
Output Voltage
300mV
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
50V
Width
0.8mm
Compliance
RoHS
Compliant
Datasheet
Onsemi DTC114EET1G Datasheet
Download the complete datasheet for Onsemi DTC114EET1G to view detailed technical specifications.
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