NPN Digital BJT transistor with 50V collector-emitter breakdown voltage and 100mA continuous collector current. Features a low 250mV collector-emitter saturation voltage and 6V emitter-base voltage. Housed in a compact 3-pin SOT-416 package, measuring 1.65mm L x 0.9mm W x 0.8mm H. Operates across a wide temperature range from -55°C to 150°C with 200mW power dissipation. RoHS and Halogen Free compliant, supplied on tape and reel.
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Onsemi DTC114YET1G technical specifications.
| Package/Case | SOT-416 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 1.65mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 0.9mm |
| RoHS | Compliant |
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