NPN Digital BJT transistor with 50V collector-emitter breakdown voltage and 100mA continuous collector current. Features a low 250mV collector-emitter saturation voltage and 6V emitter-base voltage. Housed in a compact 3-pin SOT-416 package, measuring 1.65mm L x 0.9mm W x 0.8mm H. Operates across a wide temperature range from -55°C to 150°C with 200mW power dissipation. RoHS and Halogen Free compliant, supplied on tape and reel.
PackageSOT-416
Current Rating100mA
PolarityNPN
Power200mW
Quick Jump:
Technical Specifications
Onsemi DTC114YET1G technical specifications.
General
Package/Case
SOT-416
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Halogen Free
Halogen Free
Height
0.8mm
hFE Min
80
Lead Free
Lead Free
Length
1.65mm
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
50V
Width
0.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi DTC114YET1G Datasheet
Download the complete datasheet for Onsemi DTC114YET1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.