The DTC123EET1G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 200mW and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a SC-75, 3-Pin package and is lead-free and halogen-free. It is RoHS compliant and available in quantities of 3000 per reel.
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Onsemi DTC123EET1G technical specifications.
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Halogen Free | Halogen Free |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi DTC123EET1G to view detailed technical specifications.
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