NPN Digital Bipolar Junction Transistor (BRT) with 50V Collector-Emitter Breakdown Voltage and 100mA Continuous Collector Current. Features a low 250mV Collector-Emitter Saturation Voltage and 6V Emitter-Base Voltage. Housed in a compact 3-pin SOT-416 (TO-236-3) package, this lead-free and halogen-free component operates from -55°C to 150°C with 200mW power dissipation. Supplied on tape and reel with 3000 units per package.
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| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 1.65mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 0.9mm |
| RoHS | Compliant |
These are design resources that include the Onsemi DTC123JET1G
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
