
NPN Digital Bipolar Junction Transistor (BRT) with 50V Collector-Emitter Breakdown Voltage and 100mA Continuous Collector Current. Features a low 250mV Collector-Emitter Saturation Voltage and 6V Emitter-Base Voltage. Housed in a compact 3-pin SOT-416 (TO-236-3) package, this lead-free and halogen-free component operates from -55°C to 150°C with 200mW power dissipation. Supplied on tape and reel with 3000 units per package.
Onsemi DTC123JET1G technical specifications.
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 1.65mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 0.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi DTC123JET1G to view detailed technical specifications.
No datasheet is available for this part.
