NPN Digital BJT transistor featuring a 50V collector-emitter breakdown voltage and a 100mA continuous collector current. This component offers a low 250mV collector-emitter saturation voltage and a minimum hFE of 80. Designed for surface mounting, it is housed in a 3-pin SOT-416 package with dimensions of 1.65mm length, 0.9mm width, and 0.8mm height. Operating across a temperature range of -55°C to 150°C, this RoHS and Halogen Free compliant transistor is supplied on tape and reel.
PackageSC
Current Rating100mA
PolarityNPN
Power200mW
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Technical Specifications
Onsemi DTC144EET1G technical specifications.
General
Package/Case
SC
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Halogen Free
Halogen Free
Height
0.8mm
hFE Min
80
Lead Free
Lead Free
Length
1.65mm
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
100mA
Max Power Dissipation
200mW
Operating Supply Voltage
50V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
50V
Width
0.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi DTC144EET1G Datasheet
Download the complete datasheet for Onsemi DTC144EET1G to view detailed technical specifications.
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