PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features dual collector configuration with two elements per chip, operating at a maximum collector-emitter voltage of 50V and a maximum DC collector current of 5A. Offers a maximum power dissipation of 1600mW and a minimum DC current gain of 200 at 500mA/2V. Packaged in an 8-pin ECH plastic surface mount package with flat leads, measuring 2.9mm x 2.3mm x 0.93mm. Operates across a temperature range of -55°C to 150°C.
PackageECH
MountingSurface Mount
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Technical Specifications
Onsemi ECH8503-TL-H technical specifications.
General
Package Family Name
ECH
Package/Case
ECH
Lead Shape
Flat
Pin Count
8
PCB
8
Package Length (mm)
2.9
Package Width (mm)
2.3
Package Height (mm)
0.93(Max)
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Type
PNP
Configuration
Dual Dual Collector
Number of Elements per Chip
2
Maximum Collector Base Voltage
50V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
5A
Maximum Power Dissipation
1600mW
Material
Si
Minimum DC Current Gain
200@500mA@2V
Maximum Transition Frequency
280(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi ECH8503-TL-H Datasheet
Download the complete datasheet for Onsemi ECH8503-TL-H to view detailed technical specifications.
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