P-channel enhancement mode power MOSFET featuring a dual dual drain configuration. This surface-mount device utilizes silicon material and operates with a maximum drain-source voltage of 12V and a continuous drain current of 3.5A. Housed in an 8-pin ECH package with flat leads, it offers a low seated plane height of 0.9mm and a 0.65mm pin pitch. Key electrical characteristics include a maximum drain-source on-resistance of 77mOhm at 4.5V and a typical gate charge of 3.9nC at 4.5V.
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Onsemi ECH8671-TL-H technical specifications.
| Package Family Name | ECH |
| Package/Case | ECH |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 0.93(Max) |
| Seated Plane Height (mm) | 0.9 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 12V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 3.5A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 330@6VpF |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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