P-channel enhancement mode power MOSFET featuring a dual dual drain configuration. This surface-mount device utilizes silicon material and operates with a maximum drain-source voltage of 12V and a continuous drain current of 3.5A. Housed in an 8-pin ECH package with flat leads, it offers a low seated plane height of 0.9mm and a 0.65mm pin pitch. Key electrical characteristics include a maximum drain-source on-resistance of 77mOhm at 4.5V and a typical gate charge of 3.9nC at 4.5V.
PackageECH
MountingSurface Mount
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Technical Specifications
Onsemi ECH8671-TL-H technical specifications.
General
Package Family Name
ECH
Package/Case
ECH
Lead Shape
Flat
Pin Count
8
PCB
8
Package Length (mm)
2.9
Package Width (mm)
2.3
Package Height (mm)
0.93(Max)
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage
12V
Maximum Gate Source Voltage
±10V
Maximum Continuous Drain Current
3.5A
Material
Si
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
330@6VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi ECH8671-TL-H Datasheet
Download the complete datasheet for Onsemi ECH8671-TL-H to view detailed technical specifications.
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