8-pin P-channel enhancement mode Power MOSFET in ECH package. Features 20V drain-source voltage, 3.5A continuous drain current, and 85mOhm maximum drain-source resistance at 4.5V gate-source voltage. Surface mountable with flat lead shape and 0.65mm pin pitch. Operates from -55°C to 150°C with a maximum power dissipation of 1500mW.
PackageECH
MountingSurface Mount
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Technical Specifications
Onsemi ECH8672-TL-H technical specifications.
General
Package Family Name
ECH
Package/Case
ECH
Lead Shape
Flat
Pin Count
8
PCB
8
Package Length (mm)
2.9
Package Width (mm)
2.3
Package Height (mm)
0.93(Max)
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±10V
Maximum Continuous Drain Current
3.5A
Material
Si
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
320@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi ECH8672-TL-H Datasheet
Download the complete datasheet for Onsemi ECH8672-TL-H to view detailed technical specifications.
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