P-channel Power MOSFET, 12V Drain-Source Voltage, 5A Continuous Drain Current. Features dual dual drain configuration in an 8-pin ECH surface mount package with flat leads. Offers 41mOhm maximum drain-source resistance at 4.5V gate-source voltage and 6.9nC typical gate charge. Operating temperature range from -55°C to 150°C.
PackageECH
MountingSurface Mount
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Technical Specifications
Onsemi ECH8674-TL-H technical specifications.
General
Package Family Name
ECH
Package/Case
ECH
Lead Shape
Flat
Pin Count
8
PCB
8
Package Length (mm)
2.9
Package Width (mm)
2.3
Package Height (mm)
0.93(Max)
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage
12V
Maximum Gate Source Voltage
±10V
Maximum Continuous Drain Current
5A
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
660@6VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi ECH8674-TL-H Datasheet
Download the complete datasheet for Onsemi ECH8674-TL-H to view detailed technical specifications.
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