P-channel Power MOSFET, 12V Drain-Source Voltage, 5A Continuous Drain Current. Features dual dual drain configuration in an 8-pin ECH surface mount package with flat leads. Offers 41mOhm maximum drain-source resistance at 4.5V gate-source voltage and 6.9nC typical gate charge. Operating temperature range from -55°C to 150°C.
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Onsemi ECH8674-TL-H technical specifications.
| Package Family Name | ECH |
| Package/Case | ECH |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 0.93(Max) |
| Seated Plane Height (mm) | 0.9 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 12V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 5A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 660@6VpF |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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