
Transient Voltage Suppressor Diode offering low capacitance for ESD protection. Features a UNIDIRECTIONAL SILICON diode element with a maximum operating temperature of 150°C and a minimum of -55°C. Maximum repetitive peak reverse voltage is 5.3V, with a minimum breakdown voltage of 7V and a nominal breakdown voltage of 7V. Maximum clamping voltage is 14V, and maximum power dissipation is 0.3W. This component has 2 DUAL terminals and 1 element.
Onsemi ESD7371HT1G technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5.3 |
| Breakdown Voltage-Min | 7 |
| Clamping Voltage-Max | 14 |
| Breakdown Voltage-Nom | 7 |
| Power Dissipation-Max | 0.3 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Onsemi ESD7371HT1G to view detailed technical specifications.
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