8-element unidirectional transient voltage suppressor diode array designed for ESD protection. Features a 3.3V repetitive peak reverse voltage, with breakdown voltage ranging from 5.5V to 8.5V (nominal 7V). Maximum clamping voltage is 10.3V. Operates across a wide temperature range of -55°C to 125°C. This silicon diode array has 14 terminals with dual terminal positions.
PolarityUNIDIRECTIONAL
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Technical Specifications
Onsemi ESD8008MUTAG technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 14 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 8 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 3.3 |
| Breakdown Voltage-Min | 5.5 |
| Clamping Voltage-Max | 10.3 |
| Breakdown Voltage-Nom | 7 |
| Breakdown Voltage-Max | 8.5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi ESD8008MUTAG Datasheet
Download the complete datasheet for Onsemi ESD8008MUTAG to view detailed technical specifications.
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