The ESD8016MUTAG is an 8-element unidirectional transient voltage suppressor diode from Onsemi. It has a nominal breakdown voltage of 7V and a minimum breakdown voltage of 5.5V. The diode is made of silicon and has a maximum operating temperature of 125°C. It is available in a UDFN-8 package. The ESD8016MUTAG is suitable for use in applications where transient voltage suppression is required, such as in electronic circuits that are prone to voltage spikes.
Sign in to ask questions about the Onsemi ESD8016MUTAG datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi ESD8016MUTAG technical specifications.
| Max Operating Temperature | 125 |
| Number of Terminals | 8 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 6 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 3.3 |
| Breakdown Voltage-Min | 5.5 |
| Clamping Voltage-Max | 8.4 |
| Breakdown Voltage-Nom | 7 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Onsemi ESD8016MUTAG to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.