This Onsemi ESD8551N2T5G is a bidirectional transient voltage suppressor diode with a maximum operating temperature of 125°C and a minimum operating temperature of -55°C. It features a silicon diode element and a breakdown voltage range of 5.5 to 8.3V. The diode is available in a 2-terminal package with a bottom terminal position and is rated for use in a variety of applications.
PolarityBIDIRECTIONAL
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Technical Specifications
Onsemi ESD8551N2T5G technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 3.3 |
| Breakdown Voltage-Min | 5.5 |
| Breakdown Voltage-Max | 8.3 |
Compliance
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi ESD8551N2T5G Datasheet
Download the complete datasheet for Onsemi ESD8551N2T5G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.