N-channel MOSFET with 600V drain-source breakdown voltage and 20A continuous drain current. Features 190mΩ maximum drain-source on-resistance and 208W maximum power dissipation. Designed for through-hole mounting in a TO-3PN 3-lead package, this RoHS compliant component offers a maximum operating temperature of 150°C. Key switching characteristics include a 62ns turn-on delay and 65ns fall time.
MountingThrough Hole
PolarityN-CHANNEL
Power208W
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Technical Specifications
Onsemi FCA20N60-F109 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 190MR |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.08nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | SuperFET™ |
| Turn-Off Delay Time | 230ns |
| Turn-On Delay Time | 62ns |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCA20N60-F109 Datasheet
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