N-Channel Power MOSFET featuring 600V drain-source voltage and 22A continuous drain current. Offers a low 165mΩ maximum drain-source on-resistance. This single-element transistor operates within a -55°C to 150°C temperature range and boasts a 205W maximum power dissipation. Designed for through-hole mounting in a TO-3P package, it includes fast switching characteristics with a 4ns fall time.
MountingThrough Hole
PolarityN-CHANNEL
Power205W
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Technical Specifications
Onsemi FCA22N60N technical specifications.
General
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 165mR |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.1mm |
| Input Capacitance | 1.95nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 205W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 450 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 205W |
| Radiation Hardening | No |
| Rds On Max | 165mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SupreMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 16.9ns |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCA22N60N Datasheet
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