N-Channel Power MOSFET featuring SUPERFET® and FRFET® technology. Offers a 600V drain-to-source breakdown voltage and a continuous drain current of 47A. Low on-resistance of 73mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-3P package, with a maximum power dissipation of 417W. Features fast switching characteristics with a typical fall time of 75ns.
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| Continuous Drain Current (ID) | 47A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 73mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.1mm |
| Input Capacitance | 8nF |
| Length | 16.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 417W |
| Rds On Max | 73mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 520ns |
| Turn-On Delay Time | 185ns |
| Weight | 6.401g |
| Width | 5mm |
| RoHS | Compliant |
These are design resources that include the Onsemi FCA47N60F
Product Discontinuance Notice P741AAB for legacy Fairchild products including diodes, transistors, and ICs. Final orders due Nov 19, 2017.
