N-Channel Power MOSFET featuring Easy Drive technology for simplified gate drive requirements. This device operates with a maximum drain-source voltage of 650 V and a continuous drain current of 44 A, exhibiting a low on-resistance of 70 mΩ. Designed for high-efficiency power conversion, it is housed in a D2PAK (TO-263) package, suitable for demanding applications. Operating temperature range spans from -55°C to 150°C.
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Technical Specifications
Onsemi FCB070N65S3 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263 |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Onsemi FCB070N65S3 Datasheet
Download the complete datasheet for Onsemi FCB070N65S3 to view detailed technical specifications.
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