MOSFET N-CH 600V 3.9A DPAK
Onsemi FCD4N60TM_WS technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 540pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 1.2R |
| Series | SuperFET™ |
| Turn-Off Delay Time | 36ns |
| RoHS | Not Compliant |
No datasheet is available for this part.
