N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 22A continuous drain current. This single element transistor offers a low 165mΩ Rds(on) and is housed in a TO-247 package for through-hole mounting. Key performance characteristics include a 4ns fall time and 1.95nF input capacitance, operating within a -55°C to 150°C temperature range with 205W maximum power dissipation. The device is RoHS compliant.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power205W
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Technical Specifications
Onsemi FCH22N60N technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21mm |
| Input Capacitance | 1.95nF |
| Lead Free | Lead Free |
| Length | 15.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 205W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 205W |
| Rds On Max | 165mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SupreMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 16.9ns |
| Weight | 6.39g |
| Width | 5.03mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCH22N60N Datasheet
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