N-Channel Power MOSFET featuring SUPERFET® II technology and Easy Drive capability. 600V drain-source voltage (Vdss) with a continuous drain current (ID) of 20.6A. Low on-resistance (Rds On Max) of 190mΩ. Packaged in a TO-220 through-hole mount with a maximum power dissipation of 208W. Operating temperature range from -55°C to 150°C.
Onsemi FCP190N60E technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 20.6A |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 3.175nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET® II |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 101ns |
| Turn-On Delay Time | 23ns |
| Weight | 1.8g |
| Width | 4.83mm |
| RoHS | Compliant |
No datasheet is available for this part.
