N-Channel Power MOSFET featuring SUPERFET Easy Drive technology. 600V drain-source breakdown voltage and 20A continuous drain current. Low 190mΩ drain-source on-resistance. TO-220AB through-hole package with 208W maximum power dissipation. Ideal for high-voltage switching applications.
PackageTO-220AB
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FCP20N60 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
20A
Current Rating
20A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
190MR
Element Configuration
Single
Fall Time
65ns
Gate to Source Voltage (Vgs)
30V
Height
9.4mm
Input Capacitance
3.08nF
Lead Free
Lead Free
Length
10.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Mount
Through Hole
Nominal Vgs
5V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
208W
Radiation Hardening
No
Rds On Max
190mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperFET™
Threshold Voltage
5V
Turn-Off Delay Time
230ns
Turn-On Delay Time
62ns
DC Rated Voltage
600V
Weight
1.8g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FCP20N60 Datasheet
Download the complete datasheet for Onsemi FCP20N60 to view detailed technical specifications.
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