N-Channel Power MOSFET featuring SUPERFET Easy Drive technology. 600V drain-source breakdown voltage and 20A continuous drain current. Low 190mΩ drain-source on-resistance. TO-220AB through-hole package with 208W maximum power dissipation. Ideal for high-voltage switching applications.
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| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 190MR |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 3.08nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 230ns |
| Turn-On Delay Time | 62ns |
| DC Rated Voltage | 600V |
| Weight | 1.8g |
| Width | 4.7mm |
| RoHS | Compliant |
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