
N-Channel Power MOSFET, SUPERFET®, FRFET® series, featuring 600V drain-source breakdown voltage and 11A continuous drain current. This through-hole component offers a low 380mΩ drain-source on-resistance and a maximum power dissipation of 125W. Key switching characteristics include a 34ns turn-on delay and 56ns fall time, with an input capacitance of 1.49nF. Packaged in TO-220F, this RoHS compliant device operates from -55°C to 150°C.
Onsemi FCPF11N60F technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.49nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 119ns |
| Turn-On Delay Time | 34ns |
| DC Rated Voltage | 600V |
| Weight | 2.27g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCPF11N60F to view detailed technical specifications.
No datasheet is available for this part.
