N-Channel Power MOSFET featuring SUPERFET® Easy Drive technology. 600V drain-source breakdown voltage and 11A continuous drain current. Low on-resistance of 380mΩ at 10Vgs. TO-220F package with through-hole mounting. Includes fast switching characteristics with turn-on delay of 34ns and fall time of 56ns.
PackageTO-220-3
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FCPF11N60T technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 19.3mm |
| Input Capacitance | 1.49nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | SuperFET™ |
| Turn-Off Delay Time | 119ns |
| Turn-On Delay Time | 34ns |
| DC Rated Voltage | 600V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCPF11N60T Datasheet
Download the complete datasheet for Onsemi FCPF11N60T to view detailed technical specifications.
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