N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 6.8A continuous drain current. Offers a maximum on-resistance of 520mΩ at 10Vgs. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 30.5W. Includes fast switching characteristics with turn-on delay time of 12ns and fall time of 12ns.
Sign in to ask questions about the Onsemi FCPF7N60NT datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FCPF7N60NT technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 460mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 600MR |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 960pF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30.5W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30.5W |
| Radiation Hardening | No |
| Rds On Max | 520mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SupreMOS™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 12ns |
| Weight | 2.27g |
| Width | 4.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCPF7N60NT to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
