N-channel MOSFET with 600V drain-source breakdown voltage and 7A continuous drain current. Features 530mΩ drain-source on-resistance at 10Vgs, 5V threshold voltage, and 920pF input capacitance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 83W. Packaged in TO-251-3 (I2PAK) for through-hole mounting.
PackageTO-251-3
Current Rating7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FCU7N60TU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 530mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 600mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCU7N60TU Datasheet
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