The FDA16N50 is a 500V N-CHANNEL MOSFET with a continuous drain current rating of 16.5A and a maximum power dissipation of 205W. It has a drain to source breakdown voltage of 500V and a gate to source voltage rating of 30V. The device is packaged in a through hole package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
Current Rating16.5A
MountingThrough Hole
PolarityN-CHANNEL
Power205W
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Technical Specifications
Onsemi FDA16N50 technical specifications.
General
| Continuous Drain Current (ID) | 16.5A |
| Current Rating | 16.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.945nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 205W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 205W |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDA16N50 Datasheet
Download the complete datasheet for Onsemi FDA16N50 to view detailed technical specifications.
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