MOSFET 500V NCH MOSFET
MountingThrough Hole
PolarityN-CHANNEL
Power280W
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Technical Specifications
Onsemi FDA20N50 technical specifications.
General
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.12nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 280W |
| Rds On Max | 230mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 100ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDA20N50 Datasheet
Download the complete datasheet for Onsemi FDA20N50 to view detailed technical specifications.
No datasheet is available for this part.