N-Channel Power MOSFET featuring 400V drain-source breakdown voltage and 23A continuous drain current. Offers a low 190mΩ drain-source on-resistance and 235W maximum power dissipation. This single-element transistor is designed for through-hole mounting in a TO-3P package, with typical turn-on delay of 40ns and fall time of 75ns. Operating temperature range from -55°C to 150°C, with RoHS compliance.
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Onsemi FDA24N40F technical specifications.
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 190MR |
| Element Configuration | Single |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.1mm |
| Input Capacitance | 3.03nF |
| Lead Free | Lead Free |
| Length | 16.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 235W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 235W |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 40ns |
| Weight | 6.401g |
| Width | 5mm |
| RoHS | Compliant |
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